NTTS2P02R2
Power MOSFET
?2.4 Amps, ?20 Volts
Single P ? Channel Micro8 t
Features
http://onsemi.com
?
?
?
?
?
?
?
Ultra Low R DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Micro ? 8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Pb ? Free Package is Available
? 2.4 AMPERES
? 20 VOLTS
R DS(on) = 90 m W
Single P ? Channel
D
Applications
? Power Management in Portable and Battery ? Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
S
AD G
1
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ?
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 3)
Thermal Resistance ?
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 3)
Operating and Storage
Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = ? 20 Vdc, V GS = ? 4.5 Vdc,
Peak I L = ? 5.0 Apk, L = 28 mH,
R G = 25 W )
V DSS
V GS
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
EAS
? 20
± 8.0
160
0.78
? 2.4
? 1.92
? 20
88
1.42
? 3.25
? 2.6
? 30
? 55 to
+150
350
V
V
° C/W
W
A
A
A
° C/W
W
A
A
A
° C
mJ
MARKING DIAGRAM &
PIN ASSIGNMENT
D D D D
8
8
WW
1
Micro8 G
CASE 846A
STYLE 1
S S S G
AD = Specific Device Code
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T L
260
° C
Device
Package
Shipping ?
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR ? 4 or G ? 10 PCB, Steady State.
2. Mounted onto a 2 ″ square FR ? 4 Board
(1 IN SQ, 2 oz Cu 0.06 ″ thick single sided), Steady State.
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
NTTS2P02R2 Micro8 4000/Tape & Reel
NTTS2P02R2G Micro8 4000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 5
1
Publication Order Number:
NTTS2P02R2/D
相关PDF资料
NTTS2P03R2 MOSFET P-CH 30V 2.1A 8MICRO
NTUD3127CT5G MOSFET N/P-CH 20V SOT-963
NTUD3128NT5G MOSFET N-CH DUAL 20V SOT-963
NTUD3129PT5G MOSFET P-CH DUAL 20V SOT-963
NTUD3169CZT5G MOSFET N/P-CH 20V SOT-963
NTUD3170NZT5G MOSFET N-CH DUAL 20V SOT-963
NTUD3171PZT5G MOSFET P-CH DUAL 20V SOT-963
NTY100N10G MOSFET N-CH 100V 123A TO-264
相关代理商/技术参数
NTTS2P02R2/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.4 Amps, -20 Volts
NTTS2P02R2_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -2.4 Amps, -20 Volts
NTTS2P02R2G 功能描述:MOSFET 20V 2.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTS2P03R2 功能描述:MOSFET -30V -2.48A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTTS2P03R2/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.48 Amps, -30 Volts
NTTS2P03R2_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -2.48 Amps, -30 Volts
NTTS2P03R2G 功能描述:MOSFET -30V -2.48A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTUD01N02/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 100 mAmps, 20 Volts